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 JMnic
Product Specification
Silicon PNP Power Transistors
2SB1075
DESCRIPTION With TO-126 package High collector-peak current Low collector saturation voltage APPLICATIONS For audio frequency output amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Total power dissipation Junction temperature Storage temperature Ta=25ae Open emitter Open base Open collector CONDITIONS VALUE -50 -40 -5 -2 -4 1.2 150 -55~150 ae ae UNIT V V V A A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-2mA ;IB=0 IC=-1mA ;IE=0 IC=-3.0A; IB=-0.3A*2 IC=-2.0A ;IB=-0.2A*2 VCB=-50V; IE=0 VCE=-10V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V*2 IC=-0.5A ; VCE=-5V*2 IE=0; f=1MHz ; VCB=-20V 50 MIN -40 -50
2SB1075
SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO ICEO IEBO hFE fT COB
TYP.
MAX
UNIT V V
-1.0 -1.5 -1 -100 -10 220 150 40 |I |I |I
V V A A A
MHz pF
Note: *2 pulse test
hFE Classifications P 50-100 Q 80-160 R 120-220
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1075
Fig.2 Outline dimensions
3


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